产品系列
产品系列
CSD18509Q5BT
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.2 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 13900pF @ 20V
Power Dissipation (Max) : 3.1W (Ta), 195W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-VSON-CLIP (5x6)
Package / Case : 8-PowerTDFN
型号 |
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|---|---|---|---|---|---|
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| 74SSTUB32865ZJBR | TI | 160-NFBGA (9x13) | New | 详细 | |
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| OPA830IDBVR | TI | SOT-23-5 | New | 详细 | |
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| SN74LS592DR | TI | 16-SOIC | New | 详细 | |
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| TMS320F2802GGMA | TI | 100-BGA MICROSTAR (10.1x10.1) | New | 详细 | |
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