产品系列
产品系列
CSD18511KTT
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 194A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5940pF @ 20V
Power Dissipation (Max) : 188W (Ta)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DDPAK/TO-263-3
Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
型号 |
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| LM3679TLX-1.8/NOPB | TI | 5-DSBGA (1.41x1.08) | New | 详细 | |
| LP2954AIMX/NOPB | TI | 8-SOIC | New | 详细 |
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