产品系列
产品系列
CSD19506KCS
- Manufacturer : Texas Instruments
Packaging : Tube
Series : NexFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 3.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 156nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 12200pF @ 40V
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3
型号 |
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|---|---|---|---|---|---|
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| LMX2531LQ1226E/NOPB | TI | New | 详细 | ||
| ADS7851IRTER | TI | 16-WQFN (3x3) | New | 详细 | |
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| COP8TAC9EMW8 | TI | 28-SOIC | New | 详细 | |
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| CDC857-3DGGG4 | TI | 48-TSSOP | New | 详细 |
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