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产品系列
CSD25211W1015
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 33 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id : 1.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 4.1nC @ 4.5V
Vgs (Max) : -6V
Input Capacitance (Ciss) (Max) @ Vds : 570pF @ 10V
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-DSBGA (1x1.5)
Package / Case : 6-UFBGA, DSBGA
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