产品系列
CSD86356Q5D
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 1.85V @ 250μA, 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1.04nF @ 12.5V, 2.51nF @ 12.5V
Power - Max : 12W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-VSON-CLIP (5x6)
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| TPS62320DRCR | TI | 10-VSON (3x3) | New | 详细 | |
| UA79M05CKVURG3 | TI | TO-252-3 | New | 详细 |
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