产品系列
CSD87312Q3E
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Source
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 27A
Rds On (Max) @ Id, Vgs : 33 mOhm @ 7A , 8V
Vgs(th) (Max) @ Id : 1.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 15V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-VSON (3.3x3.3)
型号 |
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| BQ2014HSNTRG4 | TI | 16-SOIC | New | 详细 | |
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