罗斌森
  • BF199_J35Z

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 25V
    Frequency - Transition : 1.1GHz
    Power - Max : 350mW
    DC Current Gain (hFE) (Min) @ Ic, Vce : 38 @ 7mA, 10V
    Current - Collector (Ic) (Max) : 50mA
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
SMMBFJ177LT1G ON SOT-23 (TO-236AB) New 详细
MC74VHC573MEL ON SOEIAJ-20 New 详细
MC10H103MELG ON 16-SOEIAJ New 详细
NSVJ3910SB3T1G ON 3-CPH New 详细
MGB15N40CLT4 ON D2PAK New 详细
BCX56-10R1 ON SOT-89-3 New 详细
NCP1230P133G ON 7-PDIP New 详细
MOC81073S ON 6-SMD New 详细
MMQA13VT1G ON SC-74 New 详细
LC74781-9013-E ON 24-DIP New 详细
BZX84C36LT3G ON SOT-23-3 (TO-236) New 详细
KSC3552OTU ON TO-3P New 详细
H11AA1SM ON 6-SMD New 详细
LC87F0G08AUJA-ZH ON 24-SSOP New 详细
LM317BD2TR4G ON D2PAK New 详细
74AC163SJ ON 16-SOP New 详细
2SB1216S-TL-E ON 2-TP-FA New 详细
CS8140YN14 ON 14-PDIP New 详细
FQPF12P20 ON TO-220F New 详细
FODM3010R4 ON 4-SMD New 详细