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BC637_J35Z
- Manufacturer : ON Semiconductor
Packaging : Bulk
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 1A
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 150mA, 2V
Power - Max : 1W
Frequency - Transition : 100MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
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