罗斌森
  • BC639ZL1G

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Box (TB)
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 1A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 150mA, 2V
    Power - Max : 625mW
    Frequency - Transition : 200MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
NCP584EVB ON New 详细
HUFA75307D3S ON TO-252AA New 详细
FPF2140 ON 6-MicroFET (2x2) New 详细
CAT8900A204TBGT3 ON SOT-23-3 New 详细
MC78M09BDTG ON DPAK New 详细
PCS3I8504AG-08CR ON 8-WDFN (2x2) New 详细
NVD6415ANLT4G ON DPAK New 详细
STK984-190-EGEVB ON New 详细
MC74VHC132D ON 14-SOIC New 详细
MC74LVX244MG ON SOEIAJ-20 New 详细
NBSG16MMNR2G ON 16-QFN (3x3) New 详细
1N4743A ON DO-41 New 详细
NCP7805ACTG ON TO-220AB New 详细
QLA694B2I ON New 详细
1N5361BRL ON Axial New 详细
FAN3100TSX ON SOT-23-5 New 详细
NUF6106FCT1G ON New 详细
FDG6308P ON SC-88 (SC-70-6) New 详细
NCP431AVDR2G ON 8-SOIC New 详细
1N4151 ON DO-35 New 详细