罗斌森
  • BD679AS

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 2.8V @ 40mA, 2A
    Current - Collector Cutoff (Max) : 500μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 2A, 3V
    Power - Max : 40W
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-126-3

极速报价

型号
品牌 封装 批号 查看
H21LOI ON New 详细
NSVMUN5332DW1T1G ON SC-88/SC70-6/SOT-363 New 详细
CS51412GD8G ON 8-SOIC New 详细
MC14551BF ON 16-SOEIAJ New 详细
MC33202VD ON 8-SOIC New 详细
FDS6688S ON 8-SOIC New 详细
MOC3033SR2M ON 6-SMD New 详细
MM74C906N ON 14-PDIP New 详细
FAN73892MX ON 28-SOIC New 详细
DAN222T1G ON SC-75, SOT-416 New 详细
LV8713T-TLM-H ON 24-TSSOP New 详细
2N3725 ON TO-5 New 详细
MC74HC574AF ON New 详细
FGD3245G2-F085 ON TO-252AA New 详细
CNW85 ON 6-DIP New 详细
NTTD4401FR2 ON Micro8? New 详细
1N4751ATR ON DO-41 New 详细
1N5985B ON DO-35 New 详细
MT9V126IA3XTCH-GEVB ON New 详细
MMSZ5V1T3G ON SOD-123 New 详细