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BD809G
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 10A
Voltage - Collector Emitter Breakdown (Max) : 80V
Vce Saturation (Max) @ Ib, Ic : 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max) : 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 15 @ 4A, 2V
Power - Max : 90W
Frequency - Transition : 1.5MHz
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220AB
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