产品系列
产品系列
FCP190N65S3
- Manufacturer : ON Semiconductor
Series : SuperFET? III
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 400V
Power Dissipation (Max) : 144W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3
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