罗斌森
  • 2N5210NMBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 700mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100μA, 5V
    Power - Max : 625mW
    Frequency - Transition : 30MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
NCP4688DMU18TCG ON 4-UDFN (1.0x1.0) New 详细
MC74AC08NG ON 14-PDIP New 详细
LC75884WHS-E ON 80-SQFP (12x12) New 详细
FLZ24VA ON SOD-80 New 详细
MC74VHCT04ADR2 ON 14-SOIC New 详细
CPH3448-TL-H ON 3-CPH New 详细
FYPF1045DNTU ON TO-220F New 详细
ISL9K3060G3 ON TO-247 New 详细
NM93C66EN ON 8-DIP New 详细
GBU8J ON GBU New 详细
2SC4617T1G ON SC-75, SOT-416 New 详细
NTD2955T4G ON DPAK New 详细
1N4745A ON DO-41 New 详细
KA2903DTF ON 8-SOIC New 详细
MMSZ24ET1 ON SOD-123 New 详细
MOD5031-868-2-GEVB ON New 详细
NOIP1SN016KA-GDI ON New 详细
HLMP47199MP8A ON New 详细
MCH3145-TL-E ON 3-MCPH New 详细
NTR3A052PZT1G ON SOT-23 (TO-236AB) New 详细