产品系列
产品系列
NTR2101PT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 8V
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 52 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1173pF @ 4V
Power Dissipation (Max) : 960mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
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