产品系列
产品系列
CSD23202W10
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 53 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id : 900mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 3.8nC @ 4.5V
Vgs (Max) : -6V
Input Capacitance (Ciss) (Max) @ Vds : 512pF @ 6V
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 4-DSBGA (1x1)
Package / Case : 4-UFBGA, DSBGA
型号 |
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| TLV73333PQDRVRQ1 | TI | 6-WSON (2x2) | New | 详细 | |
| SN75DP119RGYR | TI | 14-VQFN (3.5x3.5) | New | 详细 | |
| BQ29441DRBR | TI | 8-SON (3x3) | New | 详细 | |
| SN75374D | TI | 16-SOIC | New | 详细 | |
| SN74LS221N | TI | 16-PDIP | New | 详细 |
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